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| PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL 1mA Mounting torque Terminal connection torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C IXFN26N120P VDSS ID25 RDS(on) trr = = 1200V 23A 460m 300ns Maximum Ratings 1200 1200 30 40 23 60 13 1.5 20 695 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W C C C C V~ V~ Nm/lb.in. Nm/lb.in. g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features * International standard package * Encapsulating epoxy meets UL 94 V-0, flammability classification * miniBLOC with Aluminium nitride isolation * Fast recovery diode * Unclamped Inductive Switching (UIS) t = 1min t = 1s rated * Low package inductance - easy to drive and to protect Advantages * Easy to mount * Space savings * High power density Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 13A, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. Applications: 1200 3.5 6.5 200 V V nA High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters 50 A 5 mA 460 m (c) 2008 IXYS CORPORATION, All rights reserved DS99887A (3/08) IXFN26N120P Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 13A Gate input resistance VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 13A, Note 1 Characteristic Values Min. Typ. Max. 13 21 14 725 50 1.5 56 S nF pF pF ns ns ns ns nC nC nC 0.18 C/W C/W SOT-227B Outline Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 13A RG = 1 (External) 55 76 58 225 87 98 Source-Drain Diode TJ = 25C unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 13A, -di/dt = 100A/s VR = 100V Characteristic Values Min. Typ. Max. 26 104 1.5 A A V 300 ns 1.3 12 C A Note 1: Pulse test, t 300s; duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN26N120P Fig. 1. Output Characteristics @ 25C 26 24 22 20 18 VGS = 10V 9V 50 45 40 35 9V VGS = 10V Fig. 2. Extended Output Characteristics @ 25C ID - Amperes 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 7V 8V ID - Amperes 30 25 20 15 10 5 0 0 3 6 9 12 15 18 21 24 27 30 7V 8V VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125C 26 24 22 VGS = 10V 9V 2.8 2.6 2.4 Fig. 4. RDS(on) Normalized to ID = 13A Value vs. Junction Temperature VGS = 10V 18 ID - Amperes 8V RDS(on) - Normalized 20 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 I D = 26A I D = 13A 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 6V 7V 0.6 0.4 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 13A Value vs. Drain Current 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 30 35 40 45 50 TJ = 125C VGS = 10V 24 22 20 Fig. 6. Maximum Drain Current vs. Case Temperature RDS(on) - Normalized 18 ID - Amperes TJ = 25C 16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade (c) 2008 IXYS CORPORATION, All rights reserved IXFN26N120P Fig. 7. Input Admittance 30 40 TJ = - 40C 35 25 TJ = 125C 25C - 40C 30 Fig. 8. Transconductance g f s - Siemens ID - Amperes 20 25 20 15 10 25C 15 125C 10 5 5 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 5 10 15 20 25 30 35 0 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 80 70 60 16 14 12 10 8 6 4 2 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 40 80 VDS = 600V I D = 13A I G = 10mA Fig. 10. Gate Charge IS - Amperes 40 30 20 10 0 TJ = 125C TJ = 25C VGS - Volts 50 120 160 200 240 280 320 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance 100,000 f = 1 MHz Ciss 1.000 Fig. 12. Maximum Transient Thermal Impedance Capacitance - PicoFarads 10,000 1,000 Coss Z(th)JC - C / W 30 35 40 0.100 0.010 100 Crss 10 0 5 10 15 20 25 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 VDS - Volts Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_26N120P(96) 3-28-08-B |
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